SI4646DY-T1-E3

Vishay / Siliconix
In Stock: 178

Can ship immediately

Pricing:

Call for price or sumbit a RFQ

Quote It

Technical Details

  • Series:SkyFET®, TrenchFET®
  • Package:Tape & Reel (TR)
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:11.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1790 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):3W (Ta), 6.25W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SO
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

Related Products


SI4646DY-T1-GE3

MOSFET N-CH 30V 12A 8SO

SI4646DY-T1-GE3 Datasheet

Call for price


SI4654DY-T1-E3

MOSFET N-CH 25V 28.6A 8SO

SI4654DY-T1-E3 Datasheet

Call for price


SI4660DY-T1-E3

MOSFET N-CH 25V 23.1A 8SO

SI4660DY-T1-E3 Datasheet

Call for price


SI4682DY-T1-E3

MOSFET N-CH 30V 16A 8SO

SI4682DY-T1-E3 Datasheet

Call for price


SI4682DY-T1-GE3

MOSFET N-CH 30V 16A 8SO

SI4682DY-T1-GE3 Datasheet

Call for price


SI4684DY-T1-E3

MOSFET N-CH 30V 16A 8SO

SI4684DY-T1-E3 Datasheet

Call for price


SI4684DY-T1-GE3

MOSFET N-CH 30V 16A 8SO

SI4684DY-T1-GE3 Datasheet

Call for price


SI4688DY-T1-E3

MOSFET N-CH 30V 8.9A 8SO

SI4688DY-T1-E3 Datasheet

Call for price


SI4823DY-T1-E3

MOSFET P-CH 20V 4.1A 8SO

SI4823DY-T1-E3 Datasheet

Call for price


SI4829DY-T1-E3

MOSFET P-CH 20V 2A 8SO

SI4829DY-T1-E3 Datasheet

Call for price


Top