SI7100DN-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 8V 35A PPAK 1212-8
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI7100DN-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 193
Can ship immediately
Pricing:
Call for price or sumbit a RFQ
Quote It
Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):8 V
- Current - Continuous Drain (Id) @ 25°C:35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:3.5mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:105 nC @ 8 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:3810 pF @ 4 V
- FET Feature:-
- Power Dissipation (Max):3.8W (Ta), 52W (Tc)
- Operating Temperature:-50°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PowerPAK® 1212-8
- Package / Case:PowerPAK® 1212-8
