SI9424BDY-T1-GE3

Vishay / Siliconix
In Stock: 122

Can ship immediately

Pricing:

Call for price or sumbit a RFQ

Quote It

Technical Details

  • Series:TrenchFET®
  • Package:Tape & Reel (TR)
  • Part Status:Obsolete
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:5.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:25mOhm @ 7.1A, 4.5V
  • Vgs(th) (Max) @ Id:850mV @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:40 nC @ 4.5 V
  • Vgs (Max):±9V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):1.25W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SO
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

Related Products


SI9434BDY-T1-GE3

MOSFET P-CH 20V 4.5A 8SO

SI9434BDY-T1-GE3 Datasheet

Call for price


SIB411DK-T1-GE3

MOSFET P-CH 20V 9A PPAK SC75-6

SIB411DK-T1-GE3 Datasheet

Call for price


SIE726DF-T1-E3

MOSFET N-CH 30V 60A 10POLARPAK

SIE726DF-T1-E3 Datasheet

Call for price


SIE800DF-T1-GE3

MOSFET N-CH 30V 50A 10POLARPAK

SIE800DF-T1-GE3 Datasheet

Call for price


SIE804DF-T1-GE3

MOSFET N-CH 150V 37A 10POLARPAK

SIE804DF-T1-GE3 Datasheet

Call for price


SIE806DF-T1-GE3

MOSFET N-CH 30V 60A 10POLARPAK

SIE806DF-T1-GE3 Datasheet

Call for price


SIE816DF-T1-E3

MOSFET N-CH 60V 60A 10POLARPAK

SIE816DF-T1-E3 Datasheet

Call for price


SIE816DF-T1-GE3

MOSFET N-CH 60V 60A 10POLARPAK

SIE816DF-T1-GE3 Datasheet

Call for price


SIE830DF-T1-GE3

MOSFET N-CH 30V 50A 10POLARPAK

SIE830DF-T1-GE3 Datasheet

Call for price


SIE836DF-T1-E3

MOSFET N-CH 200V 18.3A 10POLARPK

SIE836DF-T1-E3 Datasheet

Call for price


Top