NP80N055NDG-S18-AY
Renesas Electronics America
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 55V 80A TO262
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet NP80N055NDG-S18-AY Datasheet
-
ECAD Model
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In Stock: 116
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Technical Details
- Series:-
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):55 V
- Current - Continuous Drain (Id) @ 25°C:80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:6.9mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:135 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:6900 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):1.8W (Ta), 115W (Tc)
- Operating Temperature:175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-262
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
