TK40P03M1(T6RDS-Q)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 40A DPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK40P03M1(T6RDS-Q) Datasheet
-
ECAD Model
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In Stock: 199
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Technical Details
- Series:U-MOSVI-H
- Package:Tape & Reel (TR)
- Part Status:Last Time Buy
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:10.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:17.5 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1150 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):-
- Operating Temperature:-
- Mounting Type:Surface Mount
- Supplier Device Package:DPAK
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
