TK4P60DB(T6RSS-Q)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 3.7A DPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK4P60DB(T6RSS-Q) Datasheet
-
ECAD Model
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In Stock: 164
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Technical Details
- Series:π-MOSVII
- Package:Tape & Reel (TR)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:2Ohm @ 1.9A, 10V
- Vgs(th) (Max) @ Id:4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:540 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):80W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D-Pak
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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