NTDV3055L104-1G

ON Semiconductor
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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):5V
  • Rds On (Max) @ Id, Vgs:104mOhm @ 6A, 5V
  • Vgs(th) (Max) @ Id:2V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:20 nC @ 5 V
  • Vgs (Max):±15V
  • Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1.5W (Ta), 48W (Tj)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:I-PAK
  • Package / Case:TO-251-3 Short Leads, IPak, TO-251AA

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