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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:21A (Ta), 83A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:2.6mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3510 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):2.1W (Ta), 33.3W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:-
  • Package / Case:TO-262-3 Full Pack, I²Pak

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