BSB012N03LX3 G
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 39A/180A 2WDSON
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet BSB012N03LX3 G Datasheet
-
ECAD Model
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In Stock: 171
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Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:39A (Ta), 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:1.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:169 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:16900 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):2.8W (Ta), 89W (Tc)
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:MG-WDSON-2, CanPAK M™
- Package / Case:3-WDSON
