SIE876DF-T1-GE3

Vishay / Siliconix
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Technical Details

  • Series:TrenchFET®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:6.1mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:4.4V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:77 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3100 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):5.2W (Ta), 125W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:10-PolarPAK® (L)
  • Package / Case:10-PolarPAK® (L)

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