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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:-
  • Technology:SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:15A (Tc) (155°C)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:105mOhm @ 15A
  • Vgs(th) (Max) @ Id:-

 

  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:1534 pF @ 35 V
  • FET Feature:-
  • Power Dissipation (Max):172W (Tc)
  • Operating Temperature:-55°C ~ 225°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-257
  • Package / Case:TO-257-3

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