In Stock: 172

Can ship immediately

Pricing:

Call for price or sumbit a RFQ

Quote It

Technical Details

  • Series:HEXFET®, StrongIRFET™
  • Package:Tube
  • Part Status:Discontinued at Digi-Key
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:2.5mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id:3.9V @ 100µA

 

  • Gate Charge (Qg) (Max) @ Vgs:135 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4730 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):208W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263 (D²Pak)
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products


IRF7820PBF

MOSFET N CH 200V 3.7A 8-SO

IRF7820PBF Datasheet

Call for price


IRFR3518TRPBF

MOSFET N-CH 80V 38A DPAK

IRFR3518TRPBF Datasheet

Call for price


IRF9383MTR1PBF

MOSFET P-CH 30V 22A DIRECTFET

IRF9383MTR1PBF Datasheet

Call for price


IXTA02N450HV

MOSFET N-CH 4500V 200MA TO263

IXTA02N450HV Datasheet

Call for price


IXTF03N400

MOSFET N-CH 4000V 300MA I4PAC

IXTF03N400 Datasheet

Call for price


IXTA02N250

MOSFET N-CH 2500V 200MA TO263

IXTA02N250 Datasheet

Call for price


SIR640DP-T1-GE3

MOSFET N-CH 40V 60A PPAK SO-8

SIR640DP-T1-GE3 Datasheet

Call for price


SI7860DP-T1-E3

MOSFET N-CH 30V 11A PPAK SO-8

SI7860DP-T1-E3 Datasheet

Call for price


SUD23N06-31L-E3

MOSFET N-CH 60V TO252

SUD23N06-31L-E3 Datasheet

Call for price


SUD35N05-26L-E3

MOSFET N-CH 55V 35A TO252

SUD35N05-26L-E3 Datasheet

Call for price


Top