SI2305ADS-T1-E3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):8 V
• Current - Continuous Drain (Id) @ 25°C:5.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Rds On (Max) @ Id, Vgs:40mOhm @ 4.1A, 4.5V
• Vgs(th) (Max) @ Id:800mV @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:15 nC @ 4.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:740 pF @ 4 V
• FET Feature:-
• Power Dissipation (Max):960mW (Ta), 1.7W (Tc)
• Operating Temperature:-50°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SOT-23-3 (TO-236)
• Package / Case:TO-236-3, SC-59, SOT-23-3