2SK4150TZ-E

Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):250 V
• Current - Continuous Drain (Id) @ 25°C:400mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4V
• Rds On (Max) @ Id, Vgs:5.7Ohm @ 200mA, 4V
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:3.7 nC @ 4 V
• Vgs (Max):±10V
• Input Capacitance (Ciss) (Max) @ Vds:80 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):750mW (Ta)
• Operating Temperature:150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-92
• Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)