RJK2009DPM-00#T0
Renesas Electronics America
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 40A TO3PFM
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet RJK2009DPM-00#T0 Datasheet
-
ECAD Model
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In Stock: 159
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:36mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):60W (Tc)
- Operating Temperature:-
- Mounting Type:Through Hole
- Supplier Device Package:TO-3PFM
- Package / Case:TO-3PFM, SC-93-3
