APTC90DAM60T1G
Microsemi
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 900V 59A SP1
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet APTC90DAM60T1G Datasheet
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ECAD Model
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In Stock: 182
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Technical Details
- Series:CoolMOS™
- Package:Tray
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):900 V
- Current - Continuous Drain (Id) @ 25°C:59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:60mOhm @ 52A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs:540 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:13600 pF @ 100 V
- FET Feature:Super Junction
- Power Dissipation (Max):462W (Tc)
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Chassis Mount
- Supplier Device Package:SP1
- Package / Case:SP1
