SSM3K309T(TE85L,F)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 20V 4.7A TSM
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SSM3K309T(TE85L,F) Datasheet
-
ECAD Model
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In Stock: 101
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:4.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.8V, 4V
- Rds On (Max) @ Id, Vgs:31mOhm @ 4A, 4V
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):±12V
- Input Capacitance (Ciss) (Max) @ Vds:1020 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):700mW (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:TSM
- Package / Case:TO-236-3, SC-59, SOT-23-3
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