APTML20UM18R010T1AG
Microsemi
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 109A SP1
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet APTML20UM18R010T1AG Datasheet
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ECAD Model
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In Stock: 133
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:109A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:19mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:9880 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):480W (Tc)
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Chassis Mount
- Supplier Device Package:SP1
- Package / Case:SP1