JAN2N6849
Microsemi
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 100V 6.5A TO39
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet JAN2N6849 Datasheet
-
ECAD Model
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In Stock: 108
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Technical Details
- Series:Military, MIL-PRF-19500/564
- Package:Bulk
- Part Status:Obsolete
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:320mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:34.8 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:-
- FET Feature:-
- Power Dissipation (Max):800mW (Ta), 25W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-39
- Package / Case:TO-205AF Metal Can