2N6660-E3

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:990mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On):5V, 10V
• Rds On (Max) @ Id, Vgs:3Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id:2V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):725mW (Ta), 6.25W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-205AD (TO-39)
• Package / Case:TO-205AD, TO-39-3 Metal Can