3N163-E3

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:50mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):20V
• Rds On (Max) @ Id, Vgs:250Ohm @ 100µA, 20V
• Vgs(th) (Max) @ Id:5V @ 10µA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:3.5 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):375mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-72
• Package / Case:TO-206AF, TO-72-4 Metal Can