GA20SICP12-247

Technical Details

• Series:-
• Package:Tube
• Part Status:Obsolete
• FET Type:-
• Technology:SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss):1200 V
• Current - Continuous Drain (Id) @ 25°C:45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:50mOhm @ 20A
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:3091 pF @ 800 V
• FET Feature:-
• Power Dissipation (Max):282W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-247AB
• Package / Case:TO-247-3