GA100JT17-227
GeneSiC Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS SJT 1700V 160A SOT227
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet GA100JT17-227 Datasheet
-
ECAD Model
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In Stock: 148
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Technical Details
- Series:-
- Package:Tube
- Part Status:Obsolete
- FET Type:-
- Technology:SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss):1700 V
- Current - Continuous Drain (Id) @ 25°C:160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):-
- Rds On (Max) @ Id, Vgs:10mOhm @ 100A
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):-
- Input Capacitance (Ciss) (Max) @ Vds:14400 pF @ 800 V
- FET Feature:-
- Power Dissipation (Max):535W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Chassis Mount
- Supplier Device Package:SOT-227
- Package / Case:SOT-227-4, miniBLOC
