AOD421_001

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:12.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:75mOhm @ 12.5A, 10V
• Vgs(th) (Max) @ Id:1.4V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:4.6 nC @ 4.5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):2W (Ta), 18.8W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-252, (D-Pak)
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63