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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:11A (Ta), 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):5V, 10V
  • Rds On (Max) @ Id, Vgs:18mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:24 nC @ 15 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):4.1W (Ta), 25W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-DFN (3x3)
  • Package / Case:8-PowerVDFN

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