BSP299H6327XUSA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 500V 400MA SOT223-4
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet BSP299H6327XUSA1 Datasheet
-
ECAD Model
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In Stock: 110
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Pricing:
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Technical Details
- Series:SIPMOS®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):500 V
- Current - Continuous Drain (Id) @ 25°C:400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:4Ohm @ 400mA, 10V
- Vgs(th) (Max) @ Id:4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):1.8W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-SOT223-4
- Package / Case:TO-261-4, TO-261AA
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