SIR808DP-T1-GE3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):25 V
• Current - Continuous Drain (Id) @ 25°C:20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:8.9mOhm @ 17A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:22.8 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:815 pF @ 12.5 V
• FET Feature:-
• Power Dissipation (Max):29.8W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PowerPAK® SO-8
• Package / Case:PowerPAK® SO-8