62-0095PBF

Technical Details

• Series:-
• Package:Tube
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:10A (Ta), 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:13.4mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id:2.55V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):2W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:-
• Package / Case:-