2SJ438(AISIN,A,Q)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH TO220NIS
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet 2SJ438(AISIN,A,Q) Datasheet
-
ECAD Model
- Share
In Stock: 144
Can ship immediately
Pricing:
Call for price or sumbit a RFQ
Quote It
Technical Details
- Series:*
- Package:Bulk
- Part Status:Obsolete
- FET Type:-
- Technology:-
- Drain to Source Voltage (Vdss):-
- Current - Continuous Drain (Id) @ 25°C:5A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):-
- Rds On (Max) @ Id, Vgs:-
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):-
- Input Capacitance (Ciss) (Max) @ Vds:-
- FET Feature:-
- Power Dissipation (Max):-
- Operating Temperature:-
- Mounting Type:Through Hole
- Supplier Device Package:TO-220NIS
- Package / Case:TO-220-3 Full Pack
