2SJ668(TE16L1,NQ)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CHANNEL 60V 5A PW-MOLD
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet 2SJ668(TE16L1,NQ) Datasheet
-
ECAD Model
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In Stock: 151
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Technical Details
- Series:U-MOSIII
- Package:Tape & Reel (TR)
- Part Status:Last Time Buy
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4V, 10V
- Rds On (Max) @ Id, Vgs:170mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):20W (Tc)
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Supplier Device Package:PW-MOLD
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
