TSM120N10PQ56 RLG
TSC (Taiwan Semiconductor)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 58A 8PDFN
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TSM120N10PQ56 RLG Datasheet
-
ECAD Model
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In Stock: 169
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:12mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:145 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:3902 pF @ 30 V
- FET Feature:-
- Power Dissipation (Max):36W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-PDFN (5x6)
- Package / Case:8-PowerTDFN
