SI1002R-T1-GE3

Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:610mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
• Rds On (Max) @ Id, Vgs:560mOhm @ 500mA, 4.5V
• Vgs(th) (Max) @ Id:1V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:2 nC @ 8 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:36 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):220mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SC-75A
• Package / Case:SC-75A