IXRFSM12N100

Technical Details

• Series:SMPD
• Package:Tube
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):1000 V
• Current - Continuous Drain (Id) @ 25°C:12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):15V
• Rds On (Max) @ Id, Vgs:1.05Ohm @ 6A, 15V
• Vgs(th) (Max) @ Id:5.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:77 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:2875 pF @ 800 V
• FET Feature:-
• Power Dissipation (Max):940W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:16-SMPD
• Package / Case:16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad