SSM3K35MFV,L3F
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 20V 180MA VESM
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SSM3K35MFV,L3F Datasheet
-
ECAD Model
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In Stock: 167
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Technical Details
- Series:-
- Package:Tape & Reel (TR)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:180mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.2V, 4V
- Rds On (Max) @ Id, Vgs:3Ohm @ 50mA, 4V
- Vgs(th) (Max) @ Id:1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):±10V
- Input Capacitance (Ciss) (Max) @ Vds:9.5 pF @ 3 V
- FET Feature:-
- Power Dissipation (Max):150mW (Ta)
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Supplier Device Package:VESM
- Package / Case:SOT-723
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