RJK0353DPA-WS#J0B

Renesas Electronics America
In Stock: 164

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:35A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:5.2mOhm @ 17.5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2180 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):40W (Ta)
  • Operating Temperature:150°C
  • Mounting Type:Surface Mount
  • Supplier Device Package:WPAK(3F) (5x6)
  • Package / Case:8-PowerVDFN

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