IXTD1R4N60P 11

Technical Details

• Series:PolarHV™
• Package:Tube
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:1.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:9Ohm @ 700mA, 10V
• Vgs(th) (Max) @ Id:5.5V @ 25µA

• Gate Charge (Qg) (Max) @ Vgs:5.2 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):50W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:Die
• Package / Case:Die