MVB50P03HDLT4G

Technical Details

• Series:Automotive, AEC-Q101
• Package:Bulk
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):5V
• Rds On (Max) @ Id, Vgs:25mOhm @ 25A, 5V
• Vgs(th) (Max) @ Id:2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:100 nC @ 5 V
• Vgs (Max):±15V
• Input Capacitance (Ciss) (Max) @ Vds:4.9 nF @ 25 V
• FET Feature:-
• Power Dissipation (Max):125W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:D2PAK-3
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB