HAT1069C-EL-E

Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):12 V
• Current - Continuous Drain (Id) @ 25°C:4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Rds On (Max) @ Id, Vgs:52mOhm @ 1.5A, 4.5V
• Vgs(th) (Max) @ Id:1.2V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:16 nC @ 4.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:1380 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):900mW (Ta)
• Operating Temperature:150°C
• Mounting Type:Surface Mount
• Supplier Device Package:6-CMFPAK
• Package / Case:6-SMD, Flat Leads