TSM22P10CI C0G

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:140mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id:3V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
• Vgs (Max):±25V
• Input Capacitance (Ciss) (Max) @ Vds:2250 pF @ 30 V
• FET Feature:-
• Power Dissipation (Max):48W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:ITO-220
• Package / Case:TO-220-3 Full Pack, Isolated Tab