CP398X-CPDM303NH-CT

Central Semiconductor
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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:78mOhm @ 1.8A, 2.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:13 nC @ 4.5 V
  • Vgs (Max):12V
  • Input Capacitance (Ciss) (Max) @ Vds:590 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:Die
  • Package / Case:Die

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