CP798X-CPDM302PH-WN

Technical Details

• Series:-
• Package:Tray
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:2.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:91mOhm @ 1.2A, 4.5V
• Vgs(th) (Max) @ Id:1.4V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:9.6 nC @ 5 V
• Vgs (Max):12V
• Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):-
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:Die
• Package / Case:Die