NVMFS5833NLT1G

ON Semiconductor
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Technical Details

  • Series:Automotive, AEC-Q101
  • Package:Tape & Reel (TR)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:7.5mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:32.5 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1714 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.7W (Ta)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:5-DFN (5x6) (8-SOFL)
  • Package / Case:8-PowerTDFN, 5 Leads

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