TP5335K1-G-VAO

Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):350 V
• Current - Continuous Drain (Id) @ 25°C:85mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:30Ohm @ 200mA, 10V
• Vgs(th) (Max) @ Id:2.4V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:110 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):360mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SOT-23-3
• Package / Case:TO-236-3, SC-59, SOT-23-3