TK12J60W,S1VE(S

Technical Details

• Series:-
• Package:Tray
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:11.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:300mOhm @ 5.8A, 10V
• Vgs(th) (Max) @ Id:3.7V @ 600µA

• Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:890 pF @ 300 V
• FET Feature:-
• Power Dissipation (Max):110W (Tc)
• Operating Temperature:150°C
• Mounting Type:Through Hole
• Supplier Device Package:TO-3P(N)
• Package / Case:TO-3P-3, SC-65-3