IRF100P219AKMA1

Technical Details

• Series:StrongIRFET™
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:203A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):6V, 10V
• Rds On (Max) @ Id, Vgs:1.7mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id:3.8V @ 278µA

• Gate Charge (Qg) (Max) @ Vgs:210 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:12020 pF @ 50 V
• FET Feature:-
• Power Dissipation (Max):3.8W (Ta), 341W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:PG-TO247-3
• Package / Case:TO-247-3