PHU108NQ03LT,127
NXP Semiconductors
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 25V 75A IPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet PHU108NQ03LT,127 Datasheet
-
ECAD Model
- Share
In Stock: 179
Can ship immediately
Pricing:
Call for price or sumbit a RFQ
Quote It
Technical Details
- Series:TrenchMOS™
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):25 V
- Current - Continuous Drain (Id) @ 25°C:75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):5V, 10V
- Rds On (Max) @ Id, Vgs:6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:16.3 nC @ 4.5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1375 pF @ 12 V
- FET Feature:-
- Power Dissipation (Max):187W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I-PAK
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
