PMT29EN,135

NXP Semiconductors
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Technical Details

  • Series:-
  • Package:Tape & Reel (TR)
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:29mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:492 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):820mW (Ta), 8.33W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-223
  • Package / Case:TO-261-4, TO-261AA

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