WNSC10650T6J

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• Diode Type:Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max):650 V
• Current - Average Rectified (Io):10A
• Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
• Speed:No Recovery Time > 500mA (Io)

• Reverse Recovery Time (trr):0 ns
• Current - Reverse Leakage @ Vr:60 µA @ 650 V
• Capacitance @ Vr, F:328pF @ 1V, 1MHz
• Mounting Type:Surface Mount
• Package / Case:4-VDFN Exposed Pad
• Supplier Device Package:5-DFN (8x8)
• Operating Temperature - Junction:175°C (Max)