NXPSC12650B6J

Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• Diode Type:Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max):650 V
• Current - Average Rectified (Io):12A
• Voltage - Forward (Vf) (Max) @ If:1.7 V @ 12 A
• Speed:No Recovery Time > 500mA (Io)

• Reverse Recovery Time (trr):0 ns
• Current - Reverse Leakage @ Vr:80 µA @ 650 V
• Capacitance @ Vr, F:380pF @ 1V, 1MHz
• Mounting Type:Surface Mount
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package:D2PAK
• Operating Temperature - Junction:175°C (Max)