E4D20120G

Technical Details

• Series:E-Series, Automotive
• Package:Tube
• Part Status:Active
• Diode Type:Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max):1200 V
• Current - Average Rectified (Io):56A (DC)
• Voltage - Forward (Vf) (Max) @ If:1.8 V @ 20 A
• Speed:No Recovery Time > 500mA (Io)

• Reverse Recovery Time (trr):0 ns
• Current - Reverse Leakage @ Vr:200 µA @ 200 µA
• Capacitance @ Vr, F:1474pF @ 0V, 1MHz
• Mounting Type:Surface Mount
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package:TO-263-2
• Operating Temperature - Junction:-55°C ~ 175°C